Use of titanium oxide in the positive electrode to improve conversion efficiency
It was demonstrated that a titanium oxide thin film with a thickness of approximately 5 nm exhibits both hole selectivity and the ability to inactivate surface defects of silicon (passivation), and can function as a positive electrode. The mechanism of these properties was investigated, and the results clarified that the passivation and hole selectivity can be controlled by the composition and distribution of the intermixed layer consisting of titanium, silicon, oxygen, and hydrogen present at the interface between the titanium oxide and the crystalline silicon. In addition, a prototype crystalline silicon solar cell with a titanium oxide thin film placed on the positive electrode side was fabricated and achieved conversion efficiency in excess of 20%.