Points of Interest
AIST has cleared the path for reduced write error rates required for practical applications of “voltage-induced writing,” which is expected to be a low power consumption writing technology in magnetic tunnel junction devices.
In this research, AIST demonstrated reliable operation of the voltage-induced writing method, and developed a technology for reducing the write error rate. Moreover, using computer simulations that can reproduce experiment results, AIST has shown that by reducing the magnetic damping in the recording layer and improving record retention performance, it is possible to realize a sufficiently low error rate for practical applications.
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