Temperatures of at least 1,000°C or ultra high vacuum have been considered essential

In power semiconductors that control and supply power, diamond is viewed as a promising new material with physical properties that are superior to those of silicon in supporting high efficiency, high output, and modules that are smaller and lighter. To avoid the high cost of manufacturing power semiconductors solely consisting of a diamond substrate, direct bonding of diamond and silicon substrates has been proposed as a way to replace areas that have minimal impact on performance with an inexpensive material. However, conventional direct bonding techniques involve high heat treatment of at least 1,000°C or surface sputter-etching under ultra high vacuum, which requires special equipment.