AIST has developed a prototype of a 14 nm-generation 3D transistor (FinFET) with the world’s smallest variability of characteristics. A primary cause of the characteristics variability in a FinFET is the variability of physical properties of the metal gate electrode material. An amorphous metal material for the gate electrode that has a small variability of physical properties has been developed and the prototype FinFET with the world’s smallest characteristics variability was fabricated using the material. With integrated circuits beyond the 14 nm generation, including SRAMs, major issues have been the hindrance to performance improvement and the reduction in yields, both due to the characteristics variability of elements. The present results are expected to contribute to solving these issues.
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