AIST has developed a circuit-characteristics analysis system that can reflect the detailed shape of a circuit pattern (lithography pattern) transferred to a large-scale integrated circuit (LSI) board. The developed system analyzes circuit characteristics using Technology CAD, taking into account the detailed shape of a micro-pattern predicted by lithography simulation. By using this system, the researchers of AIST have predicted the characteristics of FinFET-based SRAM circuits and determined the effects of pattern shapes unique to FinFETs on circuit characteristics. This system can be used to optimize LSI fabrication processes by simulating from semiconductor fabrication processes through to circuit characteristics of device structure; it is expected to contribute to the design of next-generation LSIs.
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