NanoElectronics Research Institute (NERI) of the National Institute of Advanced Industrial Science and Technology (AIST) has succeeded in developing high quality single-crystal tunneling magneto-resistance (TMR) device leading the world, in collaboration with the Japan Science and Technology Agency (JST). The device is expected to be a key device for implementing high performance non-volatile memory, magneto-resistive random access memory (MRAM). The TMR device has demonstrated a record performance: magneto-resistance 88 % and output voltage 380mV at room temperature, opening the way to the development of the next generation Gbit-scale MRAM.

Development of single-crystal TMR device with a magnesium-oxide tunnel barrier

Using magnesium-oxide as an innovative tunnel barrier material, and iron as an electrode material, a high quality single-crystal TMR device has been successfully fabricated.

The novel TMR device exhibits top quality

The performance of the new TMR device with the MgO tunnel barrier far surpasses that of the conventional TMR with alumina barrier: magneto-resistance 88 % against 70 %, and output voltage 380mV against 200mV, respectively.

Expected to enable to develop Gbit MRAM

The density of MRAM with the conventional TMR devices is expected to be limited at 64~128Mbit because of low output voltage. With the new TMR devices, the target value of 400mV output needed for realizing Gbit-MRAM is almost realized.

This work has been accomplished in the framework of research project “Development of Single Crystal TMR Device for Gbit-scale MRAM” (Leader: Dr. Shinji YUASA, senior researcher, NERI-AIST, within Research Area “Nano-Technology and Materials Science” (supervisor: Dr. Takeshi KAMIYA, Professor, National Institution for Academic Degrees and University Evaluation (NIAD-UE)), under the “Creation of Technological Seeds” Program of JST, based on the joint research contract between AIST and JST.