Vol.9 No.3 2017
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Research paper : High quality and large-area graphene synthesis with a high growth rate using plasma-enhanced CVD (M. Hasegawa et al.)−126−Synthesiology - English edition Vol.9 No.3 (2017) treatment. Next, we examined the spectrum of Cu 2p binding energy shown in Fig. 3(b). For the as-received copper foil substrate, satellite peaks (942.5 eV and 963 eV) attributed to bivalent copper oxides were observed, as well as peaks from Cu 2p by orbit-spin coupling and the 2p3/2 (933 eV) and 2p1/2 (953 eV) peaks.[29]–[33] The high-energy side of the Cu 2p3/2 peak of the as-received Cu foil is broad, which is caused by bivalent copper compounds such as Cu(OH)2 and CuO.[29]–[33] In the Fig. 3 XPS spectrum of the copper foil with plasma pretreatment and without plasma pretreatment[13] (a) O 1s binding energy, (b) Cu 2p binding energy, (c) Si 2p binding energy, (d) C 1s binding energyCopyright (2014) The Japan Society of Applied Physics 2202302402502605055606570020040060080010001200050001000015000Cu AugerBinding energy (eV)Binding energy (eV)Binding energy (eV)Intensity (cps)Intensity (cps)Intensity (cps)9698100102104106396398400402404Cu 2 3/2pCu 3pCu 2 1/2pCu 2sO 1sC 1sCu 3sCu 3dN 1sSi 2p284.1 eV284.5 eV286.5 eV285.0 eV288.6 eVC-O-CO=C-OCuOCu 2 3/2Cu 2 1/2CuO28028529029598100102104106108930940950960970529530531532533534535Binding energy (eV)Binding energy (eV)Binding energy (eV)Binding energy (eV)━ He/H2 plasma treatment━ Ar/H2 plasma treatment━ As-receivedIntensity (a. u.)(b)(a)(d)(c)━ He/H2 plasma treatment━ Ar/H2 plasma treatment━ As-receivedIntensity (a. u.)━ He/H2 plasma treatment━ Ar/H2 plasma treatment━ As-receivedIntensity (a. u.)━ He/H2 plasma treatment━ Ar/H2 plasma treatment━ As-receivedIntensity (a. u.)ppFig. 2 XPS survey spectrum of the as-received copper foil[13] Copyright (2014) The Japan Society of Applied Physics

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