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Research paper : Development of diamond-based power devices (S. SHIKATA et al.)−155−Synthesiology - English edition Vol.6 No.3 (2013) Conf. SiC and Related Materials, Th-P-33 (2007).[12]R. Kumaresan, H. Umezawa and S. Shikata: Parasitic resistance analysis of pseudovertical structure diamond Schottky barrier diode, Phy. Status Solidi A, 207 (8), 1997- 2001 (2010).[13]H. Umezawa, T. Saito, N. Tokuda, M. Ogura, S. G. Li, H. Yoshikawa and S. Shikata: Leakage current analysis of diamond Schottky barrier diode, Appl. Phys. Lett., 90 (7), 073506 (2007).[14]H. Umezawa, N. Tokuda, M. Ogura, S.G. Li and S. Shikata: Characterization of leakage current on diamond Schottky barrier diodes using thermionic-field emission modeling, Diamond Relat. Mater., 15, 1949-1953 (2006).[15]H. Umezawa, N. Tatsumi, S. Shikata, K. Ikeda and R. Kumaresan: Increase in reverse operation limit by barrier height control of diamond Schottky barrier diode, IEEE Electron. Device Lett., 30 (9), 960-962 (2009).[16]T. Hatakeyama, M. Kushibe, T. Watanabe, S. Imai and T. Shinohe: Optimum design of a SiC Schottky barrier diode considering reverse leakage current due to a tunneling process, Mater. Sci. Forum, 433-436, 831-834 (2003).[17]H. Umezawa, K. Ikeda, R. Kumaresan and S. Shikata: High temperature characteristics of diamond SBDs, Mater. Sci. Forum, 645-648, 1231-1234 (2010).[18]Y. Nishibayashi, N. Toda, H. Shiomi and S. Shikata: Thermally stable ohmic contact to boron doped diamond films, 4th Int’l Conf. New Diamond Science and Technology, 717-720 (1994).[19]M. Liao, J. Alvarez and Y. Koide: Tungsten carbide Schottky contact to diamond toward thermally stable photodiode, Diamond Relat. Mater., 14 (11-12), 2003-2006 (2005).[20]K. Ikeda, H. Umezawa, K. Ramanujam and S. Shikata: Thermally stable Schottky barrier diode by Ru/Diamond, Appl. Phys. Express, 2, 011202 (2009).[21]H. Umizawa, N. Tatsumi, H. Yamaguchi, T. Kato, K. Ikeda, R. Kumaresan and S. Shikata: The observation of the defects in epitaxial diamond film and its influence to SBD characteristics, 17th Meeting on SiC and Related Wide Bandgap Semiconductors, P-76 (2008) (in Japanese).[22]R. Kumaresan, H. Umezawa, N. Tatsumi, K. Ikeda and S. Shikata: Device processing, fabrication and analysis of diamond pseudo-vertical Schottky barrier diodes with low leakage current and high blocking voltage, Diamond Relat. Mater., 18, 299-302 (2009).[23]K. Ikeda, H. Umezawa and S. Shikata: Edge termination techniques for p-type diamond Schottky barrier diodes, Diamond Relat. Mater., 17 (4-5), 809-812 (2008).[24]K. Ikeda, H. Umezawa, N. Tatsumi, R. Kumaresan and S. Shikata: Fabrication of a field plate structure for diamond Schottky barrier diodes, Diamond Relat. Mater., 18 (2-3), 292-295 (2009).[25]H. Umezawa, M. Nagase, Y. Kato and S. Shikata: High temperature application of diamond power device, Diamond Relat. Mater., 24, 201-205 (2012).[26]S. Shikata, K. Ikeda, R. Kumaresan, H. Umezawa and N. Tatsumi: Recent progress of diamond device toward power application, Mater. Sci. Forum, 615-617, 999-1002 (2009).[27]H. Umezawa and S. Shikata: Characterization of temperature distribution of forward biased Schottky barrier diode on diamond wafer, Eur. Conf. SiC and Related Materials, Tue P-15 (2010).[28]H. Umezawa, Y. Kato and S. Shikata: 1 On-resistance diamond vertical-Schottky barrier diode operated at 250 °C, Appl. Phys. Express, 6, 011302 (2013).[29]K. Kodama, T. Funaki, H. Umezawa and S. Shikata: Switching characteristics of a diamond Schottky barrier diode, IEICE Electron. Express, 7 (17), 1246-1251 (2010).[30]T. Funaki, K. Kodama, H. Umezawa and S. Shikata: Characterization of fast switching capability for diamond Schottky barrier diode, Mater. Sci. Forum, 679-680, 820- 823 (2011).[31]T. Funaki, M. Hirano, H. Umezawa and S. Shikata: High temperature switching operation of a power diamond Schottky barrier diode, IEICE Electron. Express, 9 (24), 1835-1841 (2012).[32]H. Umezawa, K. Ikeda, R. Kumaresan, N. Tatsumi and S. Shikata: Device characteristics dependence on diamond SDBs area, Mater. Sci. Forum, 615-617, 1003-1006 (2009).[33]H. Umezawa, Y. Mokuno, H. Yamada, A. Chayahara and S. Shikata: Characterization of Schottky barrier diodes on a 0.5-inch single-crystalline CVD diamond wafer, Diamond Relat. Mater., 19 (2-3), 208-212 (2010).[34]R. Kumaresan, H. Umezawa and S. Shikata: Vertical structure Schottky barrier diode fabrication using insulating diamond substrate, Diamond Relat. Mater., 19 (10), 1324- 1329 (2010).[35]H. Umezawa, Y. Kato, H. Watanabe, A.M.M. Omer, H. Yamaguchi and S. Shikata: Characterization of crystallographic defects in homoepitaxial diamond films by synchrotron X-ray topography and cathodoluminescence, Diamond Relat. Mater., 20 (4), 523-526 (2011).[36]Y. Kato, H. Umezawa, H. Yamaguchi and S. Shikata: X-ray topography used to observe dislocations in epitaxially grown diamond film, Jap. J. Appl. Phys., 51, 090103 (2012).[37]H. Taniuchi, H. Umezawa, T. Arima, M. Tachiki and H. Kawarada: High-frequency performance of diamond field-effect transistor, IEEE Electon. Device Lett., 22 (8), 390-392 (2001).[38]K. Hirama, H. Sato, Y. Harada, H. Yamamoto and M. Kasu: Diamond field-effect transistors with 1.3 A/mm drain current density by Al2O3 passivation layer, Jap. J. Appl. Phys., 51, 090112 (2012).[39]T. Iwasaki, Y. Hoshino, K. Tsuzuki, H. Kato, T. Makino, M. Ogura, D. Takeuchi, T. Matsumoto, H. Okushi, S. Yamasaki and M. Hatano: Diamond junction field-effect transistors with selectively grown n+-side gates, Appl. Phys. Express, 5, 091301 (2012).AuthorsShinichi SHIKATAGraduated from the Faculty of Engineering, Kyoto University in 1978. Completed the masters program at the Graduate School of Engineering, Kyoto University in 1980. After working at a company, joined AIST in 2004. Currently, Principal Research Manager at the Research Institute of Ubiquitous Energy Devices, AIST. Engaged in R&D for wide-gap semiconductor device, SAW device, and diamond material and its device application. Conferred doctorate from the Osaka University (Engineering). Visiting Professor at the Graduate School of Engineering, Chiba University. Senior member of IEEE; member of the Japan Society of Applied Physics; and member of the Institute of Electronics, Information and Communication Engineers. Created the basic long-term plan for this research in December 2004. In this paper, headed the development of the material.

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