Vol.2 No.3 2009
30/62

Research paper : Creating non-volatile electronics with spintronics technology (S. Yuasa et al.)−203−Synthesiology - English edition Vol.2 No.3 (2009) [12][13][14][15][16][17][18][19][20]Jaswal and E. Y. Tsymbal: Interlayer exchange coupling in Fe/MgO/Fe magnetic tunnel junctions, Appl. Phys. Lett., 89, 112503-1-3 (2006).Y. Ando, T. Miyakoshi, M. Oogane, T. Miyazaki, H. Kubota, K. Ando and S. Yuasa: Spin-dependent tunneling spectroscopy in single-crystal Fe/MgO/Fe tunnel junctions, Appl. Phys. Lett., 87, 142502-1-3 (2005).D. D. Djayaprawira, K. Tsunekawa, M. Nagai, H. Maehara, S. Yamagata, N. Watanabe, S. Yuasa, Y. Suzuki and K. Ando: 230 % room-temperature magnetoresistance in CoFeB/MgO/CoFeB magnetic tunnel junctions, Appl. Phys. Lett., 86, 092502-1-3 (2005).S. Yuasa and D. D. Djayaprawira: Giant tunnel magnetoresistance in magnetic tunnel junctions with a crystalline MgO(001) barrier, J. Phys. D: Appl. Phys., 40, R337-R354 (2007).http: //www8.cao.go.jp/cstp/sangakukan/sangakukan2008/award.htmlH. Kubota, A. Fukushima, Y. Ootani, S. Yuasa, K. Ando, H. Maehara, K. Tsunekawa, D. D. Djayaprawira, N. Watanabe and Y. Suzuki: Evaluation of spin-transfer switching in CoFeB/MgO/CoFeB magnetic tunnel junctions, Jpn. J. Appl. Phys., 44, L1237-L1240 (2005).H. Kubota, A. Fukushima, Y. Ootani, S. Yuasa, K. Ando, H. Maehara, K. Tsunekawa, D. D. Djayaprawira, N. Watanabe, and Y. Suzuki: Magnetization switching by spin-polarized current in low-resistance magnetic tunnel junction with MgO [001] barrier, IEEE Trans. Magn., 41, 2633-2635 (2005).A. A. Tulapurkar, Y. Suzuki, A. Fukushima, H. Kubota, H. Maehara, K. Tsunekawa, D. D. Djayaprawira, N. Watanabe and S. Yuasa: Spin-torque diode effect in magnetic tunnel junctions, Nature, 438, 339-342 (2005).H. Kubota, A. Fukushima, K. Yakushiji, T. Nagahama, S. Yuasa, K. Ando, H. Maehara, Y. Nagamine, K. Tsunekawa, D. D. Djayaprawira, N. Watanabe and Y. Suzuki: Quantitative measurement of voltage dependence of spin-transfer torque in MgO-based magnetic tunnel junctions, Nature Phys., 4, 37-41 (2008).A. M. Deac, A. Fukushima, H. Kubota, H. Maehara, Y. Suzuki, S. Yuasa, Y. Nagamine, K. Tsunekawa, D. D. Djayaprawira and N. Watanabe: Bias-driven high-power microwave emission from MgO-based tunnel magnetoresistance devices, Nature Phys., 4, 803-809, (2008).AuthorsShinji YuasaCompleted the Keio University Faculty of Science and Technology doctoral program in March 1996, PhD., Physics. Joined the Electrotechnical Laboratory (now AIST) in April 1996. Since then, he has been engaged in basic and applied research on spintronics, and mainly the tunnel magnetoresistance effect. The awards he has received include the Prime Minister Award (Outstanding Contribution to Cooperation by Industry, Academia and Government) (2008), the Asahi Award (2007), the IBM Japan Science Award (2007), the Tokyo Technoforum 21 Gold Medal Award (2006), the AIST Chairman of the Board Award (2006), the Marubun Science Award (2006), the Ichimura Science Award (2005), the MEXT Young Scientist Award (2005), the Tsukuba Encouragement Prize (2003), and ten others. In this paper, he was responsible for MTJ thin film fabrication, measurement of the magnetoresistance effect, cooperation with Canon ANELVA Corporation and the NEDO Nanotech Challenge Project, as well as organization of the overall concept.Hitoshi KubotaCompleted the Tohoku University Science and Engineering doctoral program in March 1994. PhD., Engineering. Joined AIST in April 2004, after serving as Research Assistant, Associate Professor at Tohoku University. Has since been engaged in basic and applied research on spintronics. Received the Magnetics Society of Japan Best Paper Award (2007), the Harada Young Researcher Award (1998), and the Magnetics Society of Japan Encouragement Award (1997). In this paper, he was responsible for MTJ thin film fabrication by sputtering, MTJ device nano-machining, spin torque magnetization reversal and spin torque measurement.Akio FukushimaCompleted the University of Tokyo doctoral program in Science and Engineering in March 1991. PhD., Physics. Joined the Electrotechnical Laboratory (now AIST) in April 1993. Has since been engaged in applied research in spintronics. He received the Japan Society of Applied Physics Best Paper Award (2007). In this paper, he was responsible for the development of MTJ device nano-machining technology and development of spin torque magnetization reversal and spin dynamics measurement technology.Kay YakushijiCompleted the Tohoku University Science and Engineering doctoral program in March 2001. PhD., Engineering. After serving as a Research Assistant at Tohoku University Institute for Materials Research, he joined AIST in June 2006. Since then, he has been engaged in applied research on spintronics. He has received the Tokin Science and Technology Research Award (2006), the Harada Young Researcher Award (2005), the Applied Physics Society Lecture Award (2004), the Applied Magnetics Society of Japan Excellent Lecture Award (2003), and one other. In this paper, he was responsible for the development of vertical magnetization MTJ devices, research on spin torque magnetization reversal, and joint R & D with Toshiba.Taro NagahamaCompleted the Kyoto University Graduate School of Science doctoral program in March 1999. PhD., Physics. After serving as a Special Researcher at the Japan Society for the Promotion of Science and other positions, he joined AIST in March 2002. Since then, he has been engaged in basic research on spintronics. He has received the Applied Physics Society Best Paper Award (2005), and the Applied Magnetics Society of Japan Best Paper Award (2002). In this paper, he was responsible for MTJ thin film fabrication and measurement

元のページ 

page 30

※このページを正しく表示するにはFlashPlayer10.2以上が必要です