Vol.4 No.4 2012

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Research paper : Development of high efficiency flexible solar cells (A. Masuda )−199−Synthesiology - English edition Vol.4 No.4 (2012) an optimal shape of the texture, and the current density of the texture of the transferred moth-eye structure does not come close to the current density of the texture of the transferred surface structure of Asahi-U. Also, from Fig. 8, when the base material on which the texture is formed is used, it is shown that the quantum efficiency in the long-wavelength region increases due to light confinement. As shown in Table 1, in the case where the polymer base material was used, solar cell properties equivalent to the one fabricated on Asahi-U were obtained. This means that we succeeded in fabricating the amorphous silicon solar cell on the polymer base material, with equivalent performance to the one fabricated on a glass substrate. With the research result from this consortium, one of the participating companies, Toshiba Machine Co., Ltd., won the Nanotech Award in the Nano-fabrication Technology Category of the 2009 International Nanotechnology Exhibition and Conference (nano tech 2009). Also, although the details will not be discussed in this paper, a participant of the consortium, Sumitomo Bakelite Co., Ltd. fabricated the amorphous silicon solar cell with superstrate structure using this transfer technology, on SUMILITE® that is its organic-inorganic hybrid film, and demonstrated its effectiveness[3]. In this consortium, the formation of the barrier film onto the polymer base material was investigated with Ishikawa Seisakusho, Ltd. and the Industrial Research Institute of Ishikawa, for the purpose of realizing a highly weather-resistant flexible solar cell. To facilitate the introduction to material companies, we set the goal of not using monosilane, a special material gas, as the raw material of the silicon nitride barrier film by chemical vapor deposition. When hexamethyldisilane Table 1. Characteristics of the solar cells fabricated on various base materialsFig. 7 Current-density – voltage characteristics of the amorphous silicon solar cells fabricated on PI and PEN filmsFig. 8 Quantum efficiency spectra of the amorphous silicon solar cells fabricated on PI and PEN films!"#!$PEN base materialPI base material024681012141610.80.60.40.20Voltage(V)024681012141610.80.60.40.20Voltage(V)Current Density(mA/cm2)Current Density(mA/cm2)Asahi-UAsahi-U transferred PINon-textured PIAsahi-UAsahi-U transferred PENMoth-eye transferred PENPEN base materialPI base material0700800600500400300Wavelength(nm)Quantum EfficiencyAsahi-UAsahi-U transferred PINon-textured PIAsahi-UAsahi-U transferred PENMoth-eye transferred PENPEN Non-textured PEN0.10.20.30.40.50.60.70.80.910700800600500400300Wavelength(nm)Quantum Efficiency0.10.20.30.40.50.60.70.80.917.70.620.8714.1Moth-eye transferred PEN8.10.600.8715.6Asahi-U transferred PEN6.50.680.8311.7Non-textured PI8.30.650.8415.0Asahi-U transferred PI8.20.590.8815.7Asahi-UEfficiency (%)Fill factorOpen-circuit voltage(V) Short-circuit current density(mA/cm2)Base material

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