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Research paper : Development of single-crystalline diamond wafers (A. Chayahara et al.)−266−Synthesiology - English edition Vol.3 No.4 (2011) [33][34][35][36][37][38][39][40][41][42][43][44][45][46][47][48][49][50][51][52][53]N. R. Parikh et al.: Single-crystal diamond plate liftoff achieved by ion implantation and subsequent annealing, Appl. Phys. Lett., 61 (26), 3124-3126 (1992).Y. Tzeng et al.: Free-standing single-crystalline chemically vapor deposited diamond films, Appl. Phys. Lett., 63 (16), 2216-2218 (1993).M. Marchywka et al.: Low energy ion implantation and electrochemical separation of diamond films, Appl. Phys. Lett., 63 (25), 3521-3523 (1993).T. P. Humphreys et al.: Surface preparation of single crystal C(001) substrates for homoepitaxial diamond growth, Mat. Res. Soc. Symp. Proc., 339, 51-56 (1994).J. D. Hunn et al.: Fabrication of single-crystal diamond microcomponents, Appl. Phys. Lett., 65 (24), 3072-3074 (1994).J. D. 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Rebuli et al.: Oxygen surface studies in ultra-thin diamond using a resonance reaction and transmission channeled Rutherford forward scattering, Nucl. Instr. and Meth., B158, 701-705 (1999).P. F. Lai et al.: Recovery of diamond after irradiation at high energy and annealing, Diamond Related Mater., 10, 82-86 (2001).P. Olivero et al.: Ion-beam-assisted lift-off technique for three-dimensional micromachining of freestanding single-crystal diamond, Adv. Mater., 17, 2427-2430 (2005).J. O. Stoner Jr. and S. A. Miller: Isotopic 13C target foils 0.4–2.2 mg/cm2 by pyrolysis of methane, with alternative methods of production, Nucl. Instr. and Meth., A561, 24-37 (2006).M. W. Geis et al.: Large-area mosaic diamond films approaching single-crystal quality, Appl. Phys. Lett., 58 (22), 2485-2487 (1991).M. W. Geis et al.: Mosaic diamond substrates approaching single-crystal quality using cube-shaped diamond seeds, Diamond Related Mater., 4, 76-82 (1994).G. Janssen and L. J. 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Mokuno et al.: Fabrication of 1 inch mosaic crystal diamond wafers, Appl. Phys. Express, 3, 051301 (2010).A. Plossl and G. Krauter: Wafer direct bonding: tailoring adhesion between brittle materials, Mater. Sci. Eng., R25, 1-88 (1999).A. Chayahara et al.: High-dose implantation of MeV carbon ion into silicon, Jpn. J. Appl. Phys., 31, 139-140 (1992).A. Chayahara et al.: Formation of crystalline SiC buried layer by high-dose implantation of MeV carbon ions at high temperature, Jpn. J. Appl. Phys., 32, L1286-L1288 (1993).M. Marchywka et al.: Low energy ion implantation and electrochemical separation of diamond film, Appl. Phys. Lett., 63, 3521-3523 (1993).H. Umezawa et al.: Characterization of Schottky barrier diodes on a 0.5-inch single-crystalline CVD diamond wafer, Diamond Related Mater., 19, 208-212 (2010).http://www.d-edp.jp/[54][55][56][57][58][59][60][61]AuthorsAkiyoshi ChayaharaCompleted the doctorate program at the Graduate School of Engineering, Hiroshima University in 1988. Doctor of Engineering. Joined the Government Industrial Research Institute, Osaka, Agency of Industrial Science and Technology, Ministry of International Trade and Industry in 1988. Engaged in research of ion beam application technology. Worked at the R&D Lab for Purity Control Material, AIST from 2001. Senior Researcher of the Diamond Research Center in 2003. Leader of the Diamond Wafer Team, Diamond Research Center in 2006. Deputy Director of the Diamond Research Laboratory in 2010. In this paper, was in charge of the overall integration and the nitrogen addition effect.Yoshiaki MokunoCompleted the two-year master’s course at the Graduate School of Engineering, Tohoku University in 1990. Joined the Government Industrial Research Institute, Osaka, Agency of Industrial Science and Technology, Ministry of International Trade and Industry in 1990. Engaged in the research of optical information processing technology and ion beam application technology. Obtained Doctor of Engineering from the Tohoku University in 1996. Senior Researcher of the R&D Lab for Purity Control Material, AIST in 2001. Senior Researcher of the Diamond Wafer Team, Diamond Research Center, AIST in 2003. Currently on dispatch to the Ministry of Economy, Trade and Industry from 2009. In this paper, worked on the repeated growth method and direct wafer technology.

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