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Research paper : Development of single-crystalline diamond wafers (A. Chayahara et al.)−265−Synthesiology - English edition Vol.3 No.4 (2011) the least, it has been shown that it can be used in place of the ultrahigh-pressure substrate[60]. To obtain higher quality, the reduction of dislocation density is necessary, and we are aware that the pretreatment of the epitaxial growth is important. In the case where there is nitrogen related absorption in the visible range and this is a problem for optical use, it is possible to create a transparent product if it is grown without nitrogen addition. However, at this state, the growth rate will be 10 m/h or less. As it can be seen from the fact the CVD polycrystalline diamond coating is widely used for machine tools, the cost of the CVD process itself is not particularly expensive. If the mass production of CVD diamond is realized in the future, the several millimeter single crystals will become readily available, and 1 cm or over will be possible. As a rough estimate, for high-temperature high-pressure synthesis, when the price of a Ib type 1 cm square single-crystal diamond plate is about 1~2 million yen, it will be a digit lower with CVD. This is dependent on the scale of mass production and the corporate strategy, and it is also necessary to consider costs other than synthesis such as shaping. In the case of diamond, since there are demands besides the semiconductor, we can expect the shift to the CVD synthesized product with excellent cost efficiency even with current manufacturing technology. An AIST venture[61] based on the single-crystal diamond manufacturing technology described in this paper was established, and is supplying samples. 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Chayahara et al.: The effect of nitrogen addition during high-rate homoepitaxial growth of diamond by microwave plasma CVD, Diamond Related Mater., 13, 1954-1958 (2004).Y. Mokuno et al.: Synthesizing single-crystal diamond by repetition of high rate homoepitaxial growth by microwave plasma CVD, Diamond Related Mater., 14, 1743-1746 (2005).H. Yamada et al.: Modeling and numerical analyses of microwave plasmas for optimizations of a reactor design and its operating conditions, Diamond Related Mater., 14, 1776-1779 (2005).Y. Mokuno et al.: High rate homoepitaxial growth of diamond by microwave plasma CVD with nitrogen addition, Diamond Related Mater., 15, 455-459 (2006).S. Dunst et al.: Growth rate enhancement by nitrogen in diamond chemical vapor deposition-a catalytic effect, Appl. Phys. Lett., 94, 224101 (2009).C. Wild et al.: Oriented CVD diamond films: twin formation, structure and morphology, Diamond Related Mater., 3, 373-381 (1944).F. 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