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Research paper : R&D of SiC semiconductor power devices and strategy towards their practical utilization (K. Arai)−257−Synthesiology - English edition Vol.3 No.4 (2011) The Institute of Applied Energy: Strategic Technology Roadmap in Energy Field - Energy Technology Vision http://www.iae.or.jp/research/result/cho06.html (English version available)S. Yoshida et al.: Basic research on radiation-resistant semiconductors, Denshi Gijutsu Sogo Kenkyujo Iho, 58 (2) (1994) (in Japanese).Japan Electronics and Information Technology Industries Association: Hard Electronics Chosa Kenkyu Hokoku I (Hard Electronics Survey Report I) (March 1995); and Hard Electronics Chosa Kenkyu Hokoku II (Hard Electronics Survey Report II), Japan Electronic Industry Development Association (current Japan Electronics and Information Technology Industries Association) (March 1996) (in Japanese).K. Arai and S. Yoshida (eds.): SiC Soshi No Kiso To Oyo (Basics and Application of SiC Devices), Ohmsha (2003) (in Japanese).FREEDM Systems Center http://www.freedm.ncsu.edu/[1][2][3][4][5]ReferencesAuthorKazuo AraiGraduated from the Department of Applied Physics, Graduate School of Engineering, The University of Tokyo in March 1966. Joined the Electrotechnical Laboratory, Ministry of International Trade and Industry in April 1969. Head of the Material Science Division, ETL from January 1993 to March 2001. Leader of the “R&D for Ultralow-Loss Power Device” project from October 1998 to March 2003. Director of the Power Electronics Research Center, AIST from April 2001 to March 2008. Engaged in the R&D from the material and process development of the ultralow-loss power device to the system application of the device. Leader of the NEDO “Development of Core Technology for Power Electronics Inverter” project from July 2006 to March 2009. Currently, visiting researcher of Research and Innovation Promotion Headquarters, AIST. Doctor of Engineering.Discussions with Reviewers1 Overall structureComment (Yoshiro Owadano, Environment and Energy, AIST)The first draft is written chronologically, and the social situations, ways of thinking, events leading up to the research, and the results are presented as a mix. Therefore, it is interesting as an article, but it is difficult to follow the logical development as a paper. To contribute to the future discussion with some generalization as “synthesiology”, why don’t you rearrange the structure as follows: 1) research objective, 2) setting of the individual issues, 3) strategy for solving the issues, 4) execution and results, 5) evaluation of the strategy, and 6) future issues and strategy?Comment (Hiroshi Tateishi, New Energy and Industrial Technology Development Organization)The first draft is a chronology and commentary of the SiC device development of the past 20 years. Please revise the structure and reconsider the logical development so it will be more suitable as a research paper of synthesiology.Answer (Kazuo Arai)I revised the draft as instructed, although there may be some overlaps.2 Clarification of the research strategyComment (Yoshiro Owadano)The “Innovation of power electronics” in the first draft contains important points, and I think it should be discussed in the beginning. In that case, please organize and discuss whether you intended to replace the silicon with SiC, or whether you intended to replace the mechanical breaker and relay that are fairly functional as they are at the moment, and what would be the advantages of such replacements.Answer (Kazuo Arai)I may be unable to discuss too deeply, but I indicated the possibilities and the points of the development. If the cost approaches silicon and the reliability is established, I am certain that the kV or over power devices will become SiC.3 Reasons for selecting power electronics and SiCComment (Yoshiro Owadano)While it may be true that increasing the percentage (electrification ratio) of using energy as electric power is important, I think you should be aware that is not directly linked to the diffusion of power electronics. Please indicate the uses in which the device must be a power electronics device, specifically a SiC device, and how it is expected to become diffused.Answer (Kazuo Arai)The fact that it is not directly linked is the problem, and I think that’s because there are problems and concerns about the cost and reliability of power electronics. Innovations must be done to remove such concerns, and while the SiC device has the potential, there are still many issues that must be solved. I think the strategy for practical utilization is how to overcome the issues considering the external conditions.4 Reasons for selecting SiCComment (Hiroshi Tateishi)I think you should provide a simple explanation on why you selected SiC as your starting point or the central target among wide-gap semiconductors. It may be obvious to the researcher in charge, but it is the first question for a non-expert.Answer (Kazuo Arai)I added the explanation at the beginning of section 3.1.1. The selection of SiC was the starting point.5 Changes in research strategyComment (Hiroshi Tateishi)I suppose you did not necessarily have a clear long-term strategy from the beginning, but the specs and the strategy evolved as you looked at the relationships between material, practical material, device and system as the research progressed.Answer (Kazuo Arai)This was an important point in 2001. I added the explanation in the beginning of subchapter 3.2.6 Content of “total solution” and “power electronics innovation”Comment (Yoshiro Owadano)The original meaning of the phrase “total solution” is to take measures by integrating various methods to solve a major issue. I don’t think its meaning is the same as “integrated research”. Please state the issues that must be solved and clarify the meaning of the term “power electronics innovation”.

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