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Research paper : R&D of SiC semiconductor power devices and strategy towards their practical utilization (K. Arai)−256−Synthesiology - English edition Vol.3 No.4 (2011) source code of the basic software is disclosed and further developments are solicited from the users. This is a giant step in the Full Research for the practical utilization of the new semiconductor device. It can be positioned as the work of constructing the infrastructure in developing the future energy saving system. In quickly executing such large-scale R&D topics, the role of the Industrial Technology Architect (an AIST terminology) who conducts the integration of the funds, facilities, and joint research contracts is crucial. The device evolves as it accepts the required specifications from the system. We are at a phase where the people who bridge the device and system application play extremely important roles. AIST is expected to play the role as an integrator.5 Future issuesThe new government of Japan that came to power in September 2009 is calling to the world for “25 % reduction of greenhouse gases by 2020 compared to 1990”. In the Tsukuba region, there is a plan for the formation of the nanotechno innovation center, in the style of the Interuniversity Microelectronics Centre (IMEC) of Europe and the industry-academia collaborative research in Albany, USA. Power electronics is one of the topics. The clarification of the potential and promotion of further SiC basic research was selected as one of the 30 topics of the “Funding Program for World-Leading Innovative R&D on Science and Technology” of Japan. The R&D for the practical utilization of new semiconductors does not develop sequentially like “wafer device system application”. The individual R&Ds progress in a spiral form, for example, in response to “a larger wafer diameter is required” or “higher quality is demanded” with the advancement of device development. We expect that the industry-academia-government will join together to engage in the pioneering basic R&D to ensure practical utilization. We need an integrated R&D that looks at the future of power electronics as the key technology that supports the transformation of the energy infrastructure.AcknowledgementsI thank Professor Sadafumi Yoshida, Saitama University (currently visiting researcher at AIST) for his judicious advice on this paper. He is the pioneer of the R&D for SiC material and device and has supported our efforts from the beginning.Dispersed power supply, home electrical appliancesHigh currentTrain, high-voltage power distribution systemHigh-speedoperationGeneral-purpose INV, SW power supplyHighwithstandvoltageHigh-temperatureoperationPower system and groundinstallation of bullet trainHigh breakingresistanceEV/HEVSiC physical limitSi physical limitLow lossFig. 14 Conceptual diagram of the application and required device performanceSome of the device performances are in trade-off relationships (for example, low loss – high breaking resistance – high-speed operation). The optimization (tuning) of the device performance according to application is important.NotesNote 1) The structure of the paper was arranged according to the instructions provided by the reviewers, considering the objective of this journal. Therefore, the periods during which certain organizations were active and the periods of the projects do not necessarily match.Note 2) 1st International Workshop on Ultra-Low-Loss Power Device Technology (UPD2000), May31~June 2, 2000, Nara, Japan (organized by the Research and Development Association for Future Electronic Device).Note 3) The group led by Professor Madar of the Centre National de la Recherche Scientifique (CNRS), Grenoble, France cooperated in this simulation.Note 4) The importance of energy saving in the power electronics application was indicated in the “Strategy for Energy Saving Technology” (Energy Technology Policy Division, Agency for Natural Resources and Energy, June 12, 2002). In the revised edition, SiC is acknowledged as the energy-saving device technology for power electronics.Note 5) Special Symposium “New Start of Energy Saving Technology Development ~ New Developments in Power Electronics”, held on November 25, 2002, at the Zenkyoren Building, Tokyo. Organized by the Information Technology Research Institute, AIST.Note 6) “Research Session on SiC and Related Wide-Gap Semiconductor”, Japan Society of Applied Physics; International Conference for Silicon Carbide and Related Materials (ICSCRM01, Tsukuba); ICSCRM07 (Ohtsu).Note 7) 1st Power Electronic New Wave (PENW) International Workshop, held at Hatsumei Kaikan, Tokyo, on April 11, 2005, organized by AIST, supported by FED. 2nd PENW, on June 15, 2006, organized by PERC, supported by FED. 3rd PENW, on January 2008, AIST.European Center for Power Electronics (ECPE), Germany: an industry-academia-government collaborative effort led by Siemens AG. Established in 2003. Center for Power Electronics System (CPES), USA: one of the NSF-supported engineering centers composed of five universities and over 80 companies, led by the Virginia Polytechnic Institute and State University. Established in 1998.

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