AIST - Organization and Outline -

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・NERI, NRI, RIIF, AMRI* make contributions to the activity of Technology Research Association.・Shiro Hara, Director of Minimal System Group, manages the METI Project as project leader. ・Originating the concept of minimal fab system・Developing wafer transfer system as a core technology of minimal fab system・Developing the minimal process technology for semiconductor devices manufacturing・Establishing the minimal fab as an innovation platform for variable researches and industry* NERI: Nanoelectronics Research Institute NRI: Nanosystem Research Institute RIIF: Research Institute of Instrumentation Frontier AMRI: Advanced Manufacturing Research Institute【 Purpose 】To develop small machines and a process technology for manufacturing semiconductor devices on half-inch wafers without the requirement of a clean room. The developing system promotes the establishment of a device production line with 1/1000 investment of the existing mega-fab. The advantages of minimal fab are low investment cost, user-friendly, low power consumption, and minimum waste.【 Outline of R&D 】1.Development of minimal manufacturing equipment for semiconductor devices. 2.Development of the 0.5" silicon wafers and minimal valves.3.Development of the process technology and fab system technology for high-mix low-volume production. 【 Project 】METI project “Innovative fab system technology development by half-inch wafers and minimal equipment (minimal fab)”capasitorresistorSemiconductor componentHeat sinkMetallized heat dissipating boardPlacing passive components (capacitor, resistor) near a power semiconductor deviceMiniaturization realized by development and implementation of high heat-resistant componentsミニマルファブ 既存メガファブ 200m 2m 10m 30cm 投資5千億円 ウェハ 0.5” ウェハ 12” 投資5億円 1/1000 1/1000 クリーン ルーム 不要 ミニマル装置 0.5”ウェハ 高効率 ミニマル プロセス Minimal Fab. Mega Fab.200 m 2 m 10 m 30 cm Investment 5B$0.5" wafer12" waferInvestment 5M$1/1000 1/1000 Noclean room MinimalMachines Highly-efficientminimalprocess 0.5" waferContributions of AIST・Participation of Advanced Manufacturing Research Institute.・Contribution to the promotion of the project by Norimitsu Murayama, Director of Research Institute, as a technical promotion subleader.・Contribution from the research aspect by establishing laboratories of concentrated systems at Chubu Center, and Tsukuba Central 5.Development of high-temperature components for SiC semiconductor power modulesDevelopment of a minimal manufacturing system on half-inch wafers for customizing semiconductor devicesMinimal Fab Development AssociationFine Ceramics Research Association (FCRA)8 companies, 3 organizations (as of Sep. 1, 2012) NGK Insulators, Ltd., Murata Manufacturing Co., Ltd., KOA Corporation, Taiyo Yuden Co., Ltd., Denki Kagaku Kogyo Kabushiki Kaisha, NGK Spark Plug Co., Ltd., Japan Fine Ceramics Co., Ltd., Noritake Co., Limited., Japan Fine Ceramics Center, Japan Fine Ceramics Association, AIST【 Members 】【 Establishment 】September 1981【 President 】Nobuo Takahashi (Vice President, New Business Development Electronic Business Group, NGK Insulators, Ltd.)【 Month of AIST’s participation 】April 201221 companies, 1 organization (as of Sep. 1, 2012) Pre-Tech Co.,Ltd., Litho Tech Japan Corp., Sanmei Co., Inc., PMT Corp., Fujikoshi Machinery Corp., Fuji Imvac Inc., Sakaguchi E. H. VOC Corp., Aichisystem Corp., Tazmo Co., Ltd., Fujikin Inc., Horiba STEC Co., Ltd., Design Network Co., Ltd., Sanyo Co., Ltd., Taisei Corp., Logic Research Co., Ltd., Jedat Inc., Tool Corp., Yokogawa Field Engineering Service Corp., Okamoto Glass Co., Ltd., Yonekura MFG Co., Ltd., Koyo Thermo Systems Co., Ltd., AIST【 Members 】【 Establishment 】【 President 】Yasuyuki Harada (Chairman of Pre-Tech Co., Ltd.)【 Month of AIST’s participation 】May 2012May 2012【 Purpose 】SiC semiconductor power device has an advantage of being operational at higher temperature compared to the conventional device, and it is expected to be applied to a high-performance power converter. These researches are aiming at developing heat-resistant components placeable near the SiC power device which is operational at high temperature.【 Outline of R&D 】Development of the high-temperature components (capacitor, resistor, metallized heat dissipating board, circuit board) is carried out. R&D Partnership for Future Power Electronics Technology will be responsible for the basic technology for implementation in the NEDO project mentioned below.【 Project 】NEDO Project “Development of high-temperature components and packing technology for SiC power modules” in “Development of Next-generation Power Electronics Technogy (Green IT Project)”Contributions of AIST50Organization and OutlineAIST Participating Technology Research Associations

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