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Research Highlights, Establishment of SiC 3.3 kV switching transistor fabrication processes

Establishment of SiC 3.3 kV switching transistor fabrication processes

Points of Interest

Aiming at further development of electric power converters used in home appliances, automobiles, and various types of industrial equipment, AIST has developed novel processes for SiC high-voltage switching transistors that meet practical reliability requirements.

Figure: Microlithography machines used for prototyping SiC 3.3 kV switching transistors
Microlithography machines used for prototyping SiC 3.3 kV switching transistors
Figure: Current-Voltage characteristics of a fabricated planar-type SiC 3.3 kV switching transistor
Current-Voltage characteristics of a fabricated planar-type SiC 3.3 kV switching transistor
Figure: Cross-sectional image of a fabricated trench-type SiC 3.3 kV switching transistor


Cross-sectional image of a fabricated trench-type SiC 3.3 kV switching transistor

This research has advanced the development semiconductor-grade SiC wafer technology, SiC power device technology, and the development of power electronics integration technology consisting of circuits, packaging, and control that fully uses the SiC device performance, achieving excellent results directly connected to practical use in various challenging subjects, such as the establishment of reliable fabrication recipes. In a framework of private sector based open innovation collaborative research, in which system application companies such as automobiles, work together in consistent collaboration with materials manufacturers, machining companies, device manufacturers, and equipment manufacturers, we are accelerating research and development for practical use based on accumulated fundamental R&D results including national projects. In recent years, SiC inverter products have begun to be used in society, and various applications are increasing, focused mainly on rail vehicles, automobiles, and solar power generation.

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Contact

Hajime Okumura, Director, Research Center  
Hajime Okumura
Director, Research Center
Advanced Power Electronics Research Center

AIST Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan

E-mail: adperc_info-ml*aist.go.jp (Please convert "*" to "@".)
TEL: +81-029-861-5050
Web: https://unit.aist.go.jp/adperc/cie/


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