AIST:AIST Today 2012-1 No.43

First demonstration of ultra-small III-V/Ge CMOS transistors
- A breakthrough technology for next generation high-performance CMOS transistors of different alternative channel materials -

Tatsuro MAEDA
Nanoelectronics Research Institute

We have proposed the alternative channel materials and a new engineering process in order to realize next generation high-performance CMOS transistors for 16 nm generation. We have developed a scalable III-V/Ge CMOS technology with common metal source/drain and gate electrodes, and III-V/Ge CMOS operation with gate length of less than 100 nm has been verified for the first time.


Band lineup of InGaAs and Ge		Cross-sectional TEM image of InGaAs nMOSFET with the gate length of 50 nm

Electrical transport properties of InGaAs/Ge n/pMOSFET (Lg=100 nm)

Relational Information
	AIST TODAY Vol.11 No.12 p.14 (2011)

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First demonstration of ultra-small III-V/Ge CMOS transistors - A breakthrough technology for next generation high-performance CMOS transistors of different alternative channel materials -

First demonstration of ultra-small III-V/Ge CMOS transistors
- A breakthrough technology for next generation high-performance CMOS transistors of different alternative channel materials -