We have developed a fast switching, high temperature, high voltage diamond Schottky barrier diode (SBD) for next generation power electronics. Based on the excellent material properties of diamond, a high performance SBD was fabricated on epitaxially grown drift layer with a ruthenium Schottky electrode.

The fabricated diamond SBD shows excellent thermal stability at 400 °C and high blocking voltages (1.8 kV). Switching characteristics of the diamond SBD have been measured at elevated temperature (up to 200 °C) by the double-pulse measurement. Thanks to the unipolar operation and low dielectric constant, the turn-off time is shorter than 20 ns and is constant to the temperature and forward current density. Turn-off time of the diamond SBD is much shorter than the conventional silicon PiN diodes and comparable to silicon carbide SBDs.