Humans aspire for the rich, secure IT society. It can be said that the key to the development of the robot industry and of personal mobile electronic products is the development of higher performance, low energy consumption electronic devices. At AIST the development of next generation devices is being performed in various aspects to support the ubiquitous society.
Devices to support the ubiquitous society are required to be small so that they can be installed anywhere, to have low energy consumption so that they can be used even in large numbers and also to be highly functional to satisfy increasingly high level demands.
At AIST, research strategies are decided and research issues are repeatedly discussed. Currently, silicon CMOS is the main technology used in data processing devices but the continuing pursuit of performance improvements in CMOS devices through miniaturization is, because of physical and engineering difficulties, reaching its limit. Together with miniaturization, the introduction of new materials, new transistor structures and new processes, and further improvement of manufacturing techniques, have become indispensable. At the same time, the measurement and analysis technology that supports these has become extremely important.
Also, having the limits of silicon CMOS technology in sight, many devices with different principles of operation from CMOS have been proposed but at present no specific candidate replacing CMOS has been settled upon. Also, difficulties are being pointed out with memories (DRAM, SRAM, flash etc.) the capacity of which has increased remarkably. Proposals and development are aimed toward the practical utilization of new forms of high speed, non-volatile, CMOS compatible memory.
As research and development strategies for next generation data processing devices to support the ubiquitous society, when thinking about the above logic circuits and memory devices, three technologies shown in this pamphlet can be considered to play extremely important roles.
The three technologies introduced here are as follows.
First, with regard to silicon semiconductors, which represent the mainstream in current technology, the results of size reduction, low electricity consumption and high level functionality research at the Advanced Semiconductor Research Center are presented. Next, research on XMOS transistors, which aim at high speed with the introduction of a new gate structure, is explained. Thirdly research regarding memory which retains data even after the power supply is turned off is presented. The last two researches are mainly pursued in the Nanoelectronics Research Institute.
Figure 1 shows an extract of in the information technology and electronics field, the roadmap relating to electronic devices. The part labeled "Semiconductor device technology to realize high speed & low electricity consumption" in the upper half of the diagram shows the roadmap corresponding to the silicon semiconductor research pursued by the Advanced Semiconductor Research Center together with the Ministry of Economy, Trade and Industry and to the XMOS research being pursued by the Nanoelectronics Research Institute. The section labeled "Establishment of ultra low consumption and high density memory technology for the realization of normally off computers" in the lower half corresponds to the roadmap for non-volatile memory research pursued at the Nanoelectronics Research Institute.


