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AIST TODAYNo.21 Summer 2006 [ PDF:4MB ]


Development of high Voc Cu(In,Ga)Se2 solar cells


A novel technique to improve CIGSe solar cell performance was developed. Introduction of water vapor to a vacuum-deposition chamber reduces defects in CIGSe thin films. Open circuit voltage (Voc) and short circuit current density (Jsc) of the films increased as a result. A solar cell with a wide-gap (1.3 eV) CIGSe film gave 18.1% efficiency, Voc of 0.744V, Jsc of 32.4 mA/cm2 and fill factor of 0.752. The novel technique would lead to development of practical large area and/or flexible CIGSe solar cells.

Figure
Figure: Schematic illustration of the CIGSe solar cell structure and a device sample.

Relational Information

AIST TODAY Vol.6 , No.4 (2006) p.22-23



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