National Institute of Advanced Industrial Science and Technology (AIST)
> Research results > Publications > AIST TODAY > 2006-No.21
AIST TODAYNo.21 Summer 2006 [ PDF:4MB ]

Contents List Biomass Energy Research Hot Line In Brief

A double-gate MOSFET with an ultrafine upstanding Si-fin

We have developed a damage-free neutral-beam etching technology for the fabrication of Si-MOSFETs. A double-gate MOSFET with an upstanding Si-fin was fabricated using the technology. The MOSFET showed improved performance. We expect that this technology will be widely used in the 32nm technology node.
Figure1
 Figure2
Figure 1: SEM image of the fabricated double-gate MOSFET.
Figure 2: TEM cross-sectional image of the upstanding Si-Fin.

Relational Information

AIST TODAY Vol.6 , No.4 (2005) p.28-29

back