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AIST TODAYNo.20 Spring 2006 [ PDF:3.4MB ]

Contents List Message:The autonomy of research units andthe mission of AIST Feature:The 4th AIST Advisory Board meeting Research Hot Line In Brief

Realization of 1.3 µm semiconductor laser using uniform quantum dots of high density

We fabricated a five-layered InAs quantum dot (QD) with a high density and uniformity of 1.0 x 1011 cm-2 and 23 meV, respectively, by employing an As2 source and a gradient composition strain reducing layer. This five-layered QD laser with a 0.5-mm cavity length and cleaved facet emits 1.3 µm wavelength light at room temperature. Moreover, we could achieve a high modal gain of 43 cm-1 at 1.3µm due to the high density and uniformity of the QDs.
Figure 1
 Figure 2
Figure 1: Surface SEM image of the quantum dots
Figure 2: Emission spectrum of the quantum dots

Relational Information

AIST TODAY Vol.6 , No.2 (2006) p.20-21

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