A SiC-static induction transistors (SiC-SITs) with buried p+ gate regions by using hexagonal silicon carbide (4H-SiC) has been fabricated. The new SiC-SIT has breakdown voltage V_BR 700 V and specific on-resistance R_onS 1.01 mΩ·cm², which is the smallest R_onS in the world for switching devices of V_BR 600 V~1.2 kV class. The SiC-SIT will reduce power loss extensively to 1/12 that of silicon insulated gate bipolar transistor (Si-IGBT).