This system consists of DUV laser operating at 244 nm, microscope, dispersive spectrometer combined with a filter spectrometer and a CCD detector.
We have constructed this high through-put system using highly reflective dielectric mirrors instead of metal mirrors, and a Cassegrain reflection type objective. This DUV Raman system has enabled us to examine nano-scaled epitaxial films of wide gap semiconductors such as SiC and AlGaN. We have characterized ion-implanted surface layer and polished surface layer of SiC. We expect that our DUV Raman systems will be a versatile tool for characterizing thin surface layers of wide gap semiconductors.