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AIST TODAYNo.14 Autumn 2004


Maximization of the EUV Radiation Efficiency from a Laser-Produced Plasma for EUV Lithography

Toshihisa TOMIE
Advanced Semiconductor Research Center
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Increase of the conversion efficiency of radiation at 13-14nm is the most important issue for making EUVL affordable. An analytical formula for maximizing the radiation efficiency from a laser-produced plasma has been derived. The maximum efficiency is achieved when the plasma expansion distance during laser heating is equal to the laser absorption length. Theoretically predicted dependence of the radiation efficiency on the plasma density was confirmed in a experiment using a particle-cluster target. By creating a relatively uniform density plasma with a 0.3 mm diameter by dispersing SnO2 particles coated on a Si wafer, the conversion efficiency at 14-nm as high as 4 times of that for a solid density SnO2 target was observed.

Figure
Expansion of particles observed by the scatter of a back-illuminating laser light. The image was taken at 150 microsecond after a laser-induced shock to disperse SnO2 particles coated on a Si wafer.

Relational Information

AIST Today Vol. 4, No.8 (2004)11



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