Polytype formation of SiC heteroepitaxial films is controlled using pulsed-laser deposition (PLD) technique. The 3C, 2H, and 4H-SiC films are fabricated on sapphire substrates at a low temperature of 1100ºC. Transmission electron microscope images clearly show that each film consists of a single polytype. The SiC polytype of the films can be changed by varying only a single parameter: the laser pulse frequency. The result suggests that precise control of the growth conditions, which is essential for polytypic materials, is possible using the PLD method. Our technique allows new application of SiC electronics such as high-temperature, high-power, and high-speed heterostructure devices.