4H-SiC homoepitaxial growth was carried out on low off angled 4H-SiC substrate. By using (0001) substrate, homoepitaxial layer was successfully grown on 2-inch 4H-SiC substrate with 0.5º off angle. The grown homoepitaxal layer showed an atomically flat surface morphology and crystal homogeneity without near wafer edge. This result solves problems on SiC power devices due to a large off angle of the epitaxial wafer.