We have carried out the epitaxial growth of 4H-SiC by CVD method with the various growth conditions. We found that the C/Si ratio influences strongly on the surface morphology of epilayers, and that the window of the C/Si ratio bringing about mirror-like surfaces becomes narrow with the increase of growth rate. We also found that the change from mirror to rough with the growth conditions is abrupt, and that it is important to introduce the process gases in the early growth stage. Based on these results, we have achieved two orders in magnitude higher than usual growth rates.