The Nanoelectronics Research Institute (NERI) of the National Institute of Advanced Industrial Science and Technology (AIST), one of the independent administrative institutions, succeeded in realizing a new device technology of 4-terminal drive using two independent gates, in the form of a double-gate (DG) MOSFET which is expected to be a transistor of the new generation. The original 4-terminal drive features including flexible threshold voltage control were systematically verified by the fabricated 4-terminal DG MOSFET with the 13-nm-thick ultrathin fin-channel. The study innovates in the DG MOSFET originally proposed by the former Electrotechnical Laboratory (ETL) and will lead the way to the materialization of innovative LSIs, capable of flexible and dynamic control for optimum power consumption and operation speed.