Bandgap modified transparent conducting films were proposed and demonstrated with Al-doped Zn1-xMgxO films deposited on glass substrates by a pulsed laser deposition system. The bandgap energy of these films could be widened up to about 4 eV with increasing Mg content in the films. The maximum bandgap values of the film with an electrical resistivity of less than 1x10-3 Ωcm was 3.97 eV. Bandgap of the transparent conducting films was varied from 3.5 eV to about 4.0 eV, keeping the resistivity of less than 1x10-3 Ωcm. These films can be used not only as an UV transparent conducting film but also to control the band lineup of the multilayered semiconductor structures.
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(αh? )2 plots of Al-doped Zn1-xMgxO films with different x
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| Relational Information |
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AIST Today Vol. 4, No.2 (2004) 10
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No.12 Spring 2004
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