Given its potential as semiconductor and optically active materials,
ZnO is an attractive material both from scientific and technological
points of view. A new form of ZnO, porous zinc oxide films were prepared
by a sonochemical deposition of Zn(OH)2 and the following
low-temperature annealing. The deposition process is based on a destabilization
of zinc hydroxide/ammine complex by power ultrasonic irradiation in
an aqueous solution. The porous ZnO films affords promising industrial
applications such as sensors and catalysts.
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SEM image of the porous
ZnO film
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| Relational Information |
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AIST Today Vol. 3, No. 2 (2003) 14
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No.8
Spring 2003
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