National Institute of Advanced Industrial Science and Technology (AIST)
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AIST TODAYNo.8 Spring 2003


Fabrication of Si Nanopillars and its Application


We have developed a fabrication process using self-formation of etching masks with metal clusters as formation nuclei. When Si substrates deposited with metal clusters are subjected to electron cyclotron plasma etching with SF6 at around -130oC, reaction products in the plasma, SxFy, condense preferentially at the clusters, leading to the self-formation of nanoscale etching masks. As a result, Si pillars, about 10nm in diameter and 100nm tall, have been formed with remarkably narrow size-distributions when we use Au clusters (diameter:1 -3nm). We have also found that Si nanopillars with a very high aspect ratio (~ 20) can be fabricated by using Fe clusters.
This process has been easily combined with electron beam lithography technique, which enables us to define pillar positions. Using this process, we have fabricated field emitters, 2-dimensional photonic crystals with waveguides etc.

Figure
The fabrication process of Si nanopillars

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