A ferroelectric gate field effect transistor (FET) has been developed.
A hafnium composite oxide has been used as a buffer layer between
the silicon and ferroelectric SrBi2Ta2O9.
Since this FET itself has functions of data storage and non-destructive
read out, application to a next-generation memory was expected for
a long time. However, the data retention properties reported so far
were poor. The FET developed in AIST has superior data retention characteristics
even after experiencing 12 days from the data entry. This success
is a large breakthrough that opens up the way for the practical application
to one transistor type ferroelectric random access non-volatile memory
(1T-FeRAM).
|
 |
|
Data retention characteristics
of a ferroelectric gate memory FET
|
|
| Relational Information |
|
|
AIST Today Vol. 3, No. 1 (2003) 18
|
No.8
Spring 2003
back
> 
