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100 % ozone oxidation process has been applied for the first time
to low-temperature oxidation of silicon to fabricate device quality
SiO2 films. A new quartz cold wall–type furnace equipped
with a halogen lamp heater was built for efficient oxidation by 100
% ozone gas supplied from the lab-developed highly-concentrated ozone
generator. As shown in the figure, the ozone-oxidized SiO2
film growth rate at 400°C was as large as that of the conventional
thermal oxidation at 900°C. The electrical properties of the ozone-oxidized
SiO2 films show that the films are of the device grade.
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Comparison of the oxide film
growth rates between ozone oxidation and thermal oxidation:
The ozone oxidation at 400 °C shows a nearly equal growth
rate to the thermal oxidation at 900 °C. (the value from
a literature)
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| Relational Information |
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AIST Today Vol. 2, No. 11 (2002) 11
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No.7
Winter 2003
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