CaBi₄Ti₄O₁₅ thin films were prepared by spin-coating a tailored liquied source as a mixture solution of double alkoxides. As-deposited thin films began crystallization below 550ºC and reached full crystallinity of a single phase of layered-perovskite at 650ºC via rapid thermal annealing in oxygen. 650ºC-annealed CaBi₄Ti₄O₁₅ thin film showed random orientation on Pt-passivated Si substrate and exhibited P-E hysteresis loops. The remanent polarization (P_r) and coercive electric field (E_c) were 9.4 mC/cm² and 106 kV/cm, respectively, at 11 V. The polarization did not change after 10¹¹ switching cycles with voltage of 5 V. The dielectric constant and loss factor were 300 and 0.033, respectively, at 100 kHz.