Issue 611(December,2000 )

• Researches on Ultrasonic Standards at ETL
• Development of Tl-based Superconductors with a Comparable Tc(>130K) to Hg-based System

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• ( 16P / 392k / 72dpi / In Japanese )

Issue 610(November,2000 )

• Single-photon Detector for 1550nm Photonswith a Quantum Efficiency Exceeding 30%
• Improvement of the Device Performance for 4H-SiC MOSFETs using High-Temperature Hydrogen Annealing
• Calibration of Dosimeters for X and gamma Rays

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• ( 18P / 572k / 72dpi / In Japanese )

Issue 609(October,2000 )

• Sex Differences in the Brain Activity During Linguistic Processing of Narratives
• 7.5 fs Pulse Timing Jitter
  �|in a Phase-Locked Femtosecond Laser �|
• Atomic Resolution Scanning Tunneling Microscopy and Spectroscopy of Carbon Nanotubes

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• ( 18P / 833k / 72dpi / In Japanese )

Issue 608(September,2000 )

• Magneto-optical Waveguide on Semiconductor Substrate
  �|a New Method to Realize Optical Integrated Circuits for High-speed Optical Network �|
• Development of Hyperpolarized Noble Gas Magnetic Resonance Imaging
  �|Breakthrough in Nuclear Magnetic Resonance Sensitivity by Optical Pumping �|

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• ( 14P / 335k / 72dpi / In Japanese )

Issue 607(August,2000 )

• Robot Inspection of Nuclear Power Plant
• Development of a High-Purity Ozone Generator with a Large Accumulation Capacity
  �|A prospect of industrial applications for semiconductor device manufacturing processes �|

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• ( 16P / 480k / 72dpi / In Japanese )

Issue 606(July,2000 )

• Development of Femtosecond Time-Resolved Scanning Near-Field Optical
  Microscope (SNOM) and Its Application to Evaluation of Molecular Thin Films
• Ultra-fast Optical Manipulation of Spins in Semiconductors by using a Ultra-Short Pulse Laser

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• ( 20P / 381k / 72dpi / In Japanese )

Issue 605(June,2000 )

• Nonlinear Effect in Ultraviolet Emission due to Exciton from Diamond
  �|A Way to Realize Diamond Ultraviolet-LEDs �|
• n-Type Control of Diamond by Ion Implantation

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• ( 14P / 310k / 72dpi / In Japanese )

Issue 604(May,2000 )

• Development of a New Diagnostic System for Human Liver Diseases Based on the Conventional Ultrasonic Diagnostic Equipment
• Low Resistivity Ohmic Contacts Formed to n-type SiC at Room Temperature
  �|Evolution in Process Technology for SiC Power Devices �|

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• ( 16P / 341k / 72dpi / In Japanese )

Issue 603(April,2000 )

• Development of a Local Clean System with Environmental Performances Superior to ULSI Factory
• Ultra-Low Biased Field Emitter using Single Wall Carbon Nanotube grown directly on to Silicon Tip

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• ( 14P / 713k / 72dpi / In Japanese )

Issue 602(March,2000 )

• Outstanding Quality Improvement of MBE-Grown GaN Epitaxial Film by Controlling the Lattice Polarity
• First RT Lasing from the Ground Subband Level of V-Groove Quantum Wire Lasers

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• ( 12P / 527k / 72dpi / In Japanese )

Issue 601(February,2000 )

• Fabrication of Semiconductor-Grade ZnO Single Crystal Films
  - ZnO epitaxial films for next generation optoelectronic devices -
• Polyimides synthesized by block-copolymerization
  as low-k Insulators and resists for integrated circuits in next generation

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• ( 10P / 279k / 72dpi / In Japanese )

Issue 600(January,2000 )

• Spatiotemporal confinement of cluster growth
  - Progress in nanostructural cluster process technologies -
• New Fabrication Method of Ultrathin Silicon Dioxide
  - Key Technology for Production of Ultrahigh Density Devices -

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• ( 18P / 755k / 72dpi / In Japanese )